Study on the Laser Crystallization of Amorphous Silicon Thin Films with a 355nm Pulsed YAG Nanosecond Laser
250nm amorphous silicon thin films prepared by magnetron sputtering on glass substrates were crystallized by a 355nm pulsed YAG nanosecond laser,then the crystallized samples were investigated by metallurgical microscope,Raman spectrometer and Xray spectrometer. The results show that with increasing laser energy the width of the whole molten zone including completely molten zone and partially molten zone increases remarkably. Moreover,in the studied energy range from 15μJ to 860μJ,neither characteristic peak of amorphous silicon nor characteristic peak of crystalline silicon appears in Raman spectra of the completely molten zones. In contrast,Raman spectra of the partially molten zones exhibit the sharp characteristic peak of crystalline silicon. According to these results we are inclined to think that the energy flux density received by the completely molten zone was so high that most of the amorphous silicon in this region was evaporated. Our conjecture was further confirmed by EDS(energy dispersive spectrometer) analysis results,which shows that the composition of the completely molten zone is mainly silicide produced by reaction between glass and silicon,and its surface is covered by a silica layer.
YAG laser amorphous silicon thin films laser crystallization polycrystalline silicon thin films
Jianjun Lai Chunyan Duan Bin Ai Xueran Zeng Youjun Deng Chao Liu Hui Shen
Institute for Solar Energy Systems,State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-sen University,Guangzhou,China
国际会议
西安
英文
1929-1934
2011-12-23（万方平台首次上网日期，不代表论文的发表时间）