The Fabrication and Research of 4H-SiC Schottky Metal-Semiconductor- Metal Ultraviolet Photodetectors

摘要：

The fabrication and characterization of 4H-SiC Schottky metal-semiconductor-metal(MSM) photodetectors are reported in this paper. The current-voltage(I-V),capacitance-voltage(C-V) and spectral response characterization of the photodetectors are measured at room temperature. The dark current is 1.24×10-8 A at 4V bias,and the average capacitance is 82.66pF at 0-5V voltage range. The spectral response range is from 250nm to 350nm wavelength,and the highest responsivity appears at the wavelength of 280nm. The results indicate that the 4H-SiC photodetectors are visible-blind.

关键词： 4H-SiC ultraviolet(UV) photodetector metal-semiconductor-metal (MSM)

作者: Junqin Zhang Yintang Yang Hujun Jia Changchun Chai Hongfeng Zhu

作者单位: Key laboratory of Wide Band-Gap Semiconductor Materials and devices of Education Ministry,School of Microelectronics,Xidian University Xian,P.R.China

会议类型: 国际会议

会议名称: 2011 International Conference on Opto-Electronics Engineering and Information Science(2011光电电子工程与信息科学国际会议 ICOEIS 2011)

会议地点: 西安

会议语种:英文

页码: 2486-2489

在线出版日期: 2011-12-23（万方平台首次上网日期，不代表论文的发表时间）