Investigation on the Electric-Field-Induced Metal-Insulator Transition In Vox-Based Devices
A sandwich device structure of MIM (metal/insulator/metal) is designed and its metalinsulator transition induced by an external electric field is investigated. VOX films were deposited on several different substrates by dc magnetic sputtering at room temperature. The device of Pt/VOx/Cu/Ti/SiO2/Si exhibited steady bipolar resistance switching behaviors between high resistive state (HRS) and low resistive state (LRS) with 0.4V/0.3V operation voltages (SET/RESET), while the devices of Pt/VO/V7Cu/Ti/SiO2/Si, - Pt/VOx/Al/Ti/SiO2/Si and Pt/VOx/Pt/Ti/SiO2/Si didnt show this steady characteristic. From the comparison of these devices based on different substrates, the Schottky Emission model was quoted to explain this resistance switching characteristic in Pt/VOx/Cu/Ti/SiO2/Si device.
VOx films electric-field-induced metal-insulator transition different substrates mechanism Schottky Emission model resistive random access memory (RRAM)
Wang Qi Zhang Kailiang Wang Fang Song Kai Hu Zhixiang
School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic &Communication Devices, Tianjin University of Technology, Tianjin, 300384, P.R.China
国际会议
合肥
英文
1-4
2011-09-23（万方平台首次上网日期，不代表论文的发表时间）