Effect of Substrate Temperature on the Preparation of Cu2ZnSnSe4Thin Films
The Cu2ZnSnSe4 (CZTSe) thin films were prepared by co-electropiating Cu-Zn-Sn precursors followed by selenization at different substrate temperatures. The effect of substrate temperatures on the morphologies and structures of CZTSe films were characterized using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and Raman scattering spectrum respectively. The results revealed that the impurity phases in CZTSe thin films such as CuSe and SnSe disappeared when the substrate temperatures were increased. The surface morphologies of CZTSe thin films were also strongly dependent on the substrate temperature treatment in the selenization process though the selenium temperature was kept at 340 ℃.
Cu2ZnSnSe4 Substrate temperature Thin films Electrodeposition Selenization
Lei Han Zhesheng Chen Lei Wan Jinzhang Xu
Research center for Photovoltaic System Engineering Ministry of Education, Hefei University of Techn School of Nuclear Science and Technology , Lanzhou University, Lanzhou 730000. PR China Research center for Photovoltaic System Engineering Ministry of Education, Hefei University of Techn
国际会议
合肥
英文
895-899
2011-09-23（万方平台首次上网日期，不代表论文的发表时间）