Study on the Effect of ZnO Buffer Layer Thickness on the Properties of MgZnO Film

摘要：

MgZnO thin films with different thickness ZnO buffer layer were grown on c-sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The crystal qualities, surface morphologies and optical properties of MgZnO films were investigated by X-ray diffraction (XRD), atomic force microscope (AFM) and photoluminescence (PL) spectrum. The results showed that the thickness of ZnO buffer layer has important effect on the quality of MgZnO thin films. The MgZnO thin film with 20nm-thickness ZnO buffer layer showed the excellent crystal-quality, optical properties.

关键词： MgZnO ZnO Buffer layer MOCVD AFM

作者: X. Dong H. Wang J. Wang Z.F. Shi S.K. Zhang

作者单位: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, ChangChun 130012, PR China

会议类型: 国际会议

会议名称: 2011 3nd International Conference on Mechanical and Electronics Engineering(2011年第三届机械与电子工程国际会议 ICMEE2011)

会议地点: 合肥

会议语种:英文

页码: 1192-1195

在线出版日期: 2011-09-23（万方平台首次上网日期，不代表论文的发表时间）