A 3.1~10.6 GHz Ultra-Wideband SiGe Low Noise Amplifier with Current-Reused Technique

摘要：

A 3.1～10.6 GHz Ultra-Wideband SiGe Low Noise Amplifier (LNA) is proposed. This> low noise amplifier utilizes a current-reused technique to increase the gain and extend the bandwidth. We have a detailed analysis for the input matching, noise figure, gain and other features. The LNA was designed with the TSMC 0.35um bipolar silicon-germanium (SiGe) processes. Simulation results show that the input reflection coefficient is less than -9dB, the output reflection coefficient is less than -10dB, the maximum power gain of 17 dB and the minimum noise factor (NF) of 2.35dB. The total power consumption is 6.2 mW with 2.5V power supply.

关键词： LNA UW5 Current-reuse

作者: Kang Li Chi Liu Xiaofeng Yang Qian Feng Chaoxian Zhu Guodong Huang

作者单位: Key Laboratory of Wide Band-gap Semiconductor Materials and Devices of Ministry of Education,School of Microelectronics, Xidian University, Xian, Shanxi, China

会议类型: 国际会议

会议名称: 2011 3nd International Conference on Mechanical and Electronics Engineering(2011年第三届机械与电子工程国际会议 ICMEE2011)

会议地点: 合肥

会议语种:英文

页码: 3251-3254

在线出版日期: 2011-09-23（万方平台首次上网日期，不代表论文的发表时间）