Modulus and Internal Friction of W-doped VO2 Thin Films

摘要：

The thin films of W-doped VO2 were synthesized onto Mo substrates using reactive DC and RF magnetic cosputtering deposition techniques. The effects of W dopant on the semiconductor to metal phase transition of bare VO2 were investigated with measuring X-ray diffraction (XRD), QJ31Wheatstone Bridge and the internal friction and modulus vs temperature. The transition temperatures of VChthin film from monoclinic semiconductor to tetragonal metal are decreased from 68℃ to 40℃ with the curves of resistance vs temperature and modulus vs temperature. In addition to, the size of grains W-doped VO2IS more than that of un-doped VO2, but more smoother.

关键词： W-doped and un-doped VO2 thin films magnetron reactive sputtering X-ray diffraction surface morphology resistance-temperature internal friction phase transformation

作者: H.Q.Li X.X.He T.Liu Z.H.Nie X.Q.Lv

作者单位: School of Materials Science and Engineering, Hefei University of Technology, Hefei.Anhui,230009, Chi School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei.Anhui,230009

会议类型: 国际会议

会议名称: 2011 3nd International Conference on Mechanical and Electronics Engineering(2011年第三届机械与电子工程国际会议 ICMEE2011)

会议地点: 合肥

会议语种:英文

页码: 3343-3346

在线出版日期: 2011-09-23（万方平台首次上网日期，不代表论文的发表时间）