213 W 500 MHz 4H-SiC Static Induction Transistor

摘要：

Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.7um and the gate channel is 1.2um. One cell has 400 source fingers and each source finger width is lOOum. lmm SiC SIT yielded a current density of 123mA/mm of drain current at a drain voltage of 20V. A maximum current density of 150 mA/mm was achieved with Vd=40V. The device blocking voltage with a gate bias of -16 V was 200 V. Packaged 24-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 213 W was obtained with a power density of 8.5 W/cm and gain of 8.5 dB at 500 MHz under pulse operation.

关键词： SiC SIT RF Microwave

作者: Chen Gang Wu Peng Bai Song Li Zheyang Li Yun Ni WeiJiang Li Yuzhu

作者单位: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China, 210016

会议类型: 国际会议

会议名称: 2011 3nd International Conference on Mechanical and Electronics Engineering(2011年第三届机械与电子工程国际会议 ICMEE2011)

会议地点: 合肥

会议语种:英文

页码: 3392-3395

在线出版日期: 2011-09-23（万方平台首次上网日期，不代表论文的发表时间）