Study on Light Intensity Enhancement of ZnO/ITO/p-GaN Light-emitting Diodes
Light intensity enhancement of GaN-based blue lightemitting diodes (LEDs) is performed using different surface roughening technologies. Three roughening technologies are applied that contain surface roughening of p-GaN, textured indium tin oxide (ITO) on roughened p-GaN, and growing ZnO nanorods on textured ITO/p-GaN. A roughened p-GaN surface was grown on the c-plane sapphire substrate at temperature 800 ℃. The morphologies of the textured LEDs with roughness in the range from 9.67 nm to 51.13 nm were observed. The light output efficiency of LED with roughened ITO layer is increased up to 73.8 ％. Different dimensions of LEDs can be driven by constant injection current 20 mA without increasing threshold voltage, and larger size of ZnO/ITO/p-GaN LED shows higher luminance intensity. The LEDs with ZnO nanorods on roughened ITO/GaN have shown great performance to enhance the power conversion efficiency.
light intensity enhancement ZnO/ITO/GaN structure light emitting diode surface roughening ZnO nanorods
Hsing-Cheng Chang Ya-Hui Chen San-Shan Hung Chi-Chih Lai Chein-Chuan Hung I-Nan Chang
Dept. of Automatic Control Engineering Feng-Chia University Taichung 40724, Taiwan Ph. D. Program in Electrical and Communications Engineering Feng-Chia University Taichung 40724, Tai
国际会议
合肥
英文
4084-4087
2011-09-23（万方平台首次上网日期，不代表论文的发表时间）