Two-colour mid-infrared optical absorption under electric field in an InAs/GaSb-based type Ⅱ and broken-gap quantum well

摘要：

The optical absorptions are calculated in an InAs/GaSb-based type II and broken-gap quantum well under applied electric field. Two absorption peaks were observed through intraband transitions within the same material layer. The absorption induced by the interlayer transition is rather weak due to the small overlap of electron and hole wavefunctions. The optical absorption can be significantly affected by the applied electric field. Our results suggest that InAs/GaSb-based type II and broken-gap QWs can be employed as two-colour photodetectors, which can be controlled by the applied electric field.

关键词： two-colour mid-infrared absorption electric field photodetector

作者: X.F. Wei J.F. Ruan C.G. Xie H. Yuan J. Song

作者单位: Anhui Provincial Laboratory of Biomimetic Sensor and Detecting Technology, Academy of material and C Academy of Photoelectric Technology, Hefei University of Technology, Hefei, Anhui, China

会议类型: 国际会议

会议名称: 2011 3nd International Conference on Mechanical and Electronics Engineering(2011年第三届机械与电子工程国际会议 ICMEE2011)

会议地点: 合肥

会议语种:英文

页码: 4122-4125

在线出版日期: 2011-09-23（万方平台首次上网日期，不代表论文的发表时间）