A Novel Sub-1-V Bandgap Reference in 0.18μm CMOS Technology

摘要：

A sub-1-V bandgap reference in 0.18μm CMOS technology is introduced in this paper. A novel start-up circuitry and a novel low voltage amplifier are the enabling techniques for this design. The startup circuit consumes negligible power, yet guarantees the desired operating point of the bandgap reference. Transistors operating in sub-threshold region are used to enable sub-1-v operation of the low voltage amplifier. Unlike existing designs, the proposed amplifier can be implemented in CMOS technology with threshold voltage less than one VEB(on). The proposed sub-1-V bandgap reference is simulated in standard 0.18um CMOS technology. The maximum total current consumption is only 10.3uA and a temperature coefficient of 4.1ppm/oC can be achieved at 1.2V supply voltage. The minimum supply voltage is only 0.8V.

关键词： sub-1-v startup circuitry low-voltage amplifier bandgap reference multiple stable operating point offset voltage

作者: Min Tan Fan Liu Fei Xiang

作者单位: Analog Integrated Circuit Design DepartmentSISC, CETCChongqing, 400060, China Analog Integrated Circuit Design Department SISC, CETC Chongqing, 400060, China

会议类型: 国际会议

会议名称: 2011 IEEE International Conference on Anti-Counterfeiting Security and Identification(2011防伪、安全及鉴定国际会议 ASID2011)

会议地点: 厦门

会议语种:英文

页码: 180-183

在线出版日期: 2011-06-24（万方平台首次上网日期，不代表论文的发表时间）