Design of CMOS Inductor-less LNA with Active Balun

摘要：

In this paper, a wide-band CMOS inductor-less low noise amplifier (LNA) with active balun is presented, in which the noise-canceling technique is exploited to reduce the thermal noise of input transistor. The LNA combining with active balun can convert the single-ended RF signal into differential signals, so off-chip balun is not needed. Furthermore, the LNA is inductor-less, which can reduce chip area. The LNA is designed in TSMC 0.18μm RF CMOS process with 1.8V supply voltage. The simulation results show that the noise figure is less than 3.9dB, the input match is less than -11.7dB rang from 150MHz to 600MHz and IIP3 is 1.03dBm.

关键词： wideband noise canceling technique CMOS low noise amplifier (CMOS LNA)

作者: Chaodong Ling Lifen Lin Xiao Yang Weiwei Huang

作者单位: College of Information Science & Engineering, Huaqiao University, Xiamen, 361021, China Key Laboratory of ASIC and System of Xiamen, Xiamen, 361008, China

会议类型: 国际会议

会议名称: 2011 IEEE International Conference on Anti-Counterfeiting Security and Identification(2011防伪、安全及鉴定国际会议 ASID2011)

会议地点: 厦门

会议语种:英文

页码: 191-193

在线出版日期: 2011-06-24（万方平台首次上网日期，不代表论文的发表时间）