Effects of IPA on texturing process for mono-crystalline silicon solar cell in TMAH solution
Texturization of mono-crystalline by chemical anisotropic etching is one of the most important technologies for modern silicon photovoltaic. IPA is usually added to the alkaline etchants to improve the uniformity of the random pyramid texture due to remove hydrogen bubbles sticking on the silicon wafer by improving the wettability of wafer surface. In this investigation, we carried out a systematic study on the influence of IPA concentrations on the textured surface. The etching experiments were performed on (100) silicon wafer in a mixture of 20 vol. ％ commercial TMAH solutions (10 wt.％) and IPA (rang from 0~12 vol. ％) for etching time ranging from 10 to 70 min at 80℃. The etching mechanism in the TMAH solutions with IPA addition was explained basing on the experimental results and the theoretical considerations.
Texture pyramids TMAH IPA
OU Weiying WANG Wenjing ZHANG Yao LI Hailing ZHAO Lei ZHOU Chunlan DIAO Hongwei LIU Min LU Weiming ZHANG Jun
Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of ElectricalEngineering,
国际会议
11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)
青岛
英文
31-37
2010-09-25（万方平台首次上网日期，不代表论文的发表时间）