Excellent surface passivation by silicon dioxide grown with a electrochemical method

摘要：

A novel method to grow silicon dioxide layers for passivating the silicon surface is given more attention. SiO2 was grown by applying a positive voltage across silicon wafers in a nitric acid solution at low temperature. After annealing in N2 media at 900℃ for 20min, excellent surface passivation was achieved. The maximum effective lifetime of the silicon arrived at 29.8μs and 29.75μs, which was three times the value of silicon without passivation. The effective lifetime of other types of silicon could be ten times the initial value without the silicon dioxide. A comparison study of the effect of the FGA, annealing at low temperature and annealing in N2 or O2 containing medium at high temperature were investigated.

关键词： SiO2 silicon dioxide nitric acid voltage anneal passivation silicon

作者: J. Zhang W.M. Lu Ch.l. Zhou Zh.L. Wen L. Zhao H.L. Li H.W. Diao Y. Zhang W.J. Wang

作者单位: Key laboratory of Solar Thermal Energy and Photovoltaic System, Institute of ElectricalEngineering, State Key Laboratory for Corrosion and Protection, Institute of Metal Research,Wencui Road 62, Sheny Key laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering,

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 48-54

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）