Graded buffer layer effect on performance of the amorphous silicon thin film solar cells

摘要：

It is widely accepted that graded buffer layer between the p-layer and i-layer increase the efficiency of amorphous silicon solar cells. The open-circuit voltage (Voc), short current density (Jsc) and fill factor (FF) of the thin film solar cell are obviously increased. In the present study, hydrogenated amorphous silicon (a-Si:H) thin film solar cells have been fabricated by 27.12 MHz plasma enhanced chemical vapor deposition (PECVD). We discussed the three conditions at the p/i interface without buffer layer, buffer layer and graded buffer layer of thin film solar cells by TCAD software. The influences of the performance of the solar cell with the different buffer layer are investigated. The cell with graded buffer layer has higher efficiency compared with the cells without buffer layer and buffer layer. The graded buffer layer enhances the conversion efficiency of the solar cell by improving Voc and FF. It could be attributed to a reduction of interface recombination rate near the junction. The best performance of conversion efficiency (η)=8.57％ (Voc=0.81 V, Jsc=15.46 mA/cm2, FF=68％) of the amorphous silicon thin film solar cell was achieved.

关键词： Thin film solar cell PECVD TCAD amorphous silicon buffer layer

作者: Shui-Yang Lien Meng-Jia Yang Yang-Shih Lin Chia-Fu Chen Po-Hung Lin Chia-Hsun Hsu Po-Ching Huang Yu-Ming Shen

作者单位: Department of Materials Science and Engineering, MingDao University, ChunHua 52345, Taiwan Graduate Institute of Materials Science and Green Engineering, National Formosa University,Huwei, Yu Department of Mechanical Engineering, Yuan Ze University, Tao-Yuan 32003, Taiwan

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 60-64

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）