Preparation and characterization of Cu2ZnSnSe4 thin films by selenization of electrodeposited metal precursors
Cu2ZnSnSe4 thin films were prepared by selenization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were electrodeposited on the Mo-coated glass substrates from an electrolyte containing copper sulfate, zinc sulfate, tin (Ⅱ) sulfate at a fixed potential between -1.2V and -1.25V vs. saturated calomel electrode, then the Cu2ZnSnSe4 thin films were obtained by selenizing Cu-Zn-Sn precursors in elemental selenium atmosphere at different temperatures. The structure, composition and optical properties of the films were investigated by X-ray diffraction, Energy dispersive spectrometry and UV-VIS absorption spectroscopy. The CZTSe films have a stannite structure and an optical band-gap about 1.6 eV which is suitable for fabricating solar cells.
Cu2ZnSnSe4 solar cells electrodeposition
Ji Li Zhong-wei Yang Ou Weifeng Liu Guoshun Jiang Chang-fei Zhu
CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science andEngineerin CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineeri
国际会议
11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)
青岛
英文
105-109
2010-09-25（万方平台首次上网日期，不代表论文的发表时间）