Properties of Fe doped amorphous Carbon thin films for photovoltaic solar cell applications semiconductors only have
The iron-doped amorphous carbon films (a-C: Fe) and Al2O3 films were deposited on n-type silicon substrates using pulsed laser deposition to form (a-C: Fe)/Al2O3/Si solar cells in a pulsed laser deposition (PLD) system. The microstructure of the films was investigated by Raman scattering spectroscopy. The electrical properties of the films were characterized by room temperature electrical conductivity (σ) and the activation energy (Ea). The results show that the Fe-doped amorphous homogeneous structure is formed by Fe diffused into a-C films after annealing treatment. The a-C: Fe films are disordered graphitized carbon system and are rich in sp2. The (a-C: Fe) /Al2O3 /Si junction has good rectifying properties and remarkable Photovoltaic effect.
amorphous carbon iron doping photovoltaic
Xinyu Tan Xiaozhong Zhang Caihua Wan Xili Gao
School of Science, China Three Gorges University, Yichang 443002, China Department of Materials Scie Department of Materials Science and Engineering, National Center for Electron Microscopy,Beijing, Ts
国际会议
11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)
青岛
英文
110-113
2010-09-25（万方平台首次上网日期，不代表论文的发表时间）