The application of simulation and optimization in the growth of high-purity silicon thin film on low-purity silicon substrate by liquid phase epitaxial
This paper describe a method in the growth of high-purity Si thin film on low-purity silicon substrate by liquid phase epitaxial (LPE) growth, in order to eliminate the effect of melt substrate on the matrix, we simulate the matrix temperature effect on the epitaxial substrate temperature choice and the growth of thin film thickness with the growth time, then we carried out experiment according to the simulation result. Through the analyses experimental results, we found that on the low-purity silicon substrate can grow very good high-purity silicon thin film by liquid phase epitaxial (LPE) growth and thickness with growth time have little difference between the simulation. So we come to the conclusion: The growth of high-purity Si thin film on low-purity silicon substrate by liquid phase epitaxial (LPE) growth is a good way to make solar cell material; through the numerical simulation, we can effectively reduce the test energy consumption and test repeat times, which provide a good theoretical basis for the experiment successfully conduct.
numerical simulation LPE growth Si thin film
Yong-chao Gao Bai-tong Zhao Wen-xiu Gao
Shanghai Institute of Technical Physics of The Chinese Academy of Sciences,500 Yutian Road, Shanghai School of Materials Science and Engineering of Beijing University of Science and Technology,30 Xueyu Shanghai Institute of Technical Physics of The Chinese Academy of Sciences, 500 Yutian Road, Shangha
国际会议
11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)
青岛
英文
130-133
2010-09-25（万方平台首次上网日期，不代表论文的发表时间）