The Study of Flower-shaped Structure Dislocation in 4 Inch <100> Germanium Single Crystal
As the key component of single junction GaAs/Ge solar cells and GaAs/Ge solar cells, the quality of germanium single crystal affects the properties of space solar cell directly. The dislocation of germanium single crystals is the main impact factor on solar cells efficiency. Through measuring dislocation densities in the different positions of 4 inch <100> germanium single crystals produced by Czochralski method, we found that flower-shaped structure dislocations pattern was mainly caused by the inclusions. This paper briefly analyzed dislocations produced by inclusions, chemical etching pits method. SEM and EDS measurement methods were also employed to study the flower-shaped structure defects. A germanium single crystal with low dislocation density was obtained and the special defects were almost eliminated. The germanium single crystal with low dislocation density (PV) was obtained, which could meet the requirement of the GaAs/Ge solar cells.
Germanium single crystal Flower-shaped structure Dislocation Inclusions GaAs/Ge solar cell
Li Miaomiao Su Xiaoping Feng Deshen, Zuo Jianlong Li Nan Wang Xuewu
General Research Institute for Nonferrous Metals, Guojing Infrared OpticalTechnology Co. Ltd., Beiji General Research Institute for Nonferrous Metals, Guojing Infrared Optical Technology Co. Ltd., Beij
国际会议
11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)
青岛
英文
141-146
2010-09-25（万方平台首次上网日期，不代表论文的发表时间）