High Temperature Stability of SiC/Ti Interface

摘要：

Ti, SiC and their composite materials have been widely used as high temperature structural material. The knowledge of interfacial stability between SiC and Ti is vital in high temperature applications. In this study, SiC/Ti diffusion couples were prepared to investigate the interfacial reactions between SiC and Ti at 1273 K. Phase forming sequence, microstructure and thermal stability of SiC/Ti interface were studied. It was indicated that after annealed at 1273 K for 10 days, 4 reaction layers were formed at the SiC/Ti interface. The diffusion path between SiC and Ti is SiC/Ti3SiC2/Ti5Si3/Ti5Si3+TiC/Ti3Si/Ti. As the annealing time prolong, the thicknesses of these reaction layers increased increased.

关键词： SiC interface diffusion path thermal stability

作者: Tungwai Leo NGAI Changxu HU Wei ZHENG Heng XIE Yuanyuan LI

作者单位: National Engineering Research Center of Near-net-shape Forming for Metallic Materials,South China Un National Engineering Research Center of Near-net-shape Forming for Metallic Materials,South China Un School of Life Science, Beijing Institute of Technology, Beijing 100081, China Beijing Laboratory An National Engineering Research Center of Near-net-shape Forming for Metallic Materials, South China U

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 340-344

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）