A HRTEM study of resistive switching behaviour in SiO2 thin films by sol-gel process

摘要：

Amorphous SiO2 thin films were fabricated at different temperatures using sol-gel technique. The unipolar resistive switching behavior was observed in Cu/ SiO2/ ATO (SnO2: Sb) sandwiched structure when the SiO2 thin film annealed at 500℃. The average ratio of Roff /Ron is 102. We investigated the successful device using HRTEM and XPS. It shows that the Cu defuses into the SiO2 thin film and it forms CuSiO3 in the interface between SiO2 and ATO films according to the high resolution images.

关键词： Resistive switching HRTEM SiO2 sol-gel

作者: Ying Li Gaoyang Zhao Xiaofei Zhou Lining Pan Yang Ren

作者单位: Advanced material analysis center, Xi’an University of Technology, BOX 759＃, No.5,Jinhua South road, Material science and engineering school, Xi’an University of Technology,Xi’an, Shanxi 710048, China Material science and engineering school, Xi’an University of Technology, Xi’an, Shanxi 710048, China

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 1-6

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）