Ab initio study on hexagonal Ge2Sb2Te5-a phase-change material for nonvolatile memories

摘要：

On the basis of ab initio total energy calculations, we have performed an extensive study on the stacking sequence and random occupation of Ge and Sb to make the same layer in stable hexagonal Ge2Sb2Te5 (h-GST), an excellent candidate for phase change random memory applications. The results demonstrate that the atomic arrangements have great effects on lattice parameter c and electronic properties of h-GST. h-GST changes from semiconductor to metallic behavior as varying the atomic sequence.

关键词： Phase-change materials first principles Atomic arrangements

作者: Zhimei Sun Yuanchun Pan Baisheng Sa Jian Zhou

作者单位: Department of Materials Science and Engineering, College of Materials,Xiamen University, Xiamen 3610 Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 7-11

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）