The improvement of performance of HfO2/Gd2O3/Si stack compared with Gd-doped HfO2 High-k films
HfO2/Gd2O3/Si stack and Gd-doped HfO2 (GDH) High-k films have been grown on p-type Si (001) substrates by RF sputtering. The amorphous structures of GDH high k film which be grown and annealed at 700℃ have been determined by HRTEM. There is a interface layer between Gd2O3 film and Si in HfO2/Gd2O3/Si stack. XPS measurement reveals that the peak shift to small binding energy for Hf4f due to the formation of Hf-O-Gd, and there are formations of gadolinium and hafnium silicate. A leakage current density of 1×10-6 A/cm2 at -1 V, a hysteresis voltage of 13 mV, a dielectric constant of 23 and a CET of 1 nm are obtained from a capacitor with Pt/HfO2/Gd2O3/Si/Ag stack through C-V and I-V measurements. In addition, the HfO2/Gd2O3/Si stack film has a higher breakdown voltage (~ 30 V) than that of GDH films.
high k sputting Gd2O3 HfO2
Xiaona Wang Xinqiang Zhang Yuhua Xiong Jun Du Mengmeng Yang Lei Wang Hailing Tu
Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals,Beijing 10 Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 1
国际会议
11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)
青岛
英文
209-214
2010-09-25（万方平台首次上网日期，不代表论文的发表时间）