Thermal Analysis of High Power Light Emitting Diodes Package

摘要：

With increasing of the input power of the chips in light emitting diode (LED), the thermal accumulation of LEDs package increases. Therefore solving the heat issue has become a precondition of high power LED application. In this paper, finite element method was used to analyze the thermal field of high power LEDs. The effect of the heatsink structure on the junction temperature was also investigated. The results show that the temperature of the chip is 95.8℃ which is the highest, and it meets the requirement. The conductivity of each component affects the thermal resistance. Convective heat exchange is connected with the heat dissipation area. In the original structure of LEDs package the heat convected through the substrate is the highest, accounting for 92.58％. Three heatsinks with fin structure are designed to decrease the junction temperature of the LEDs package.

关键词： high power LEDs package finite element analysis junction temperature heatsink structure

作者: Yuanyuan Han Hong Guo Ximin Zhang Fazhang Yin Ke Chu Yao Ouyang

作者单位: General Research Institute for Nonferrous Metals, Beijing, China

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 215-221

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）