Deposition and characterization of pyroelectric PMN-PT thin films for uncooled infrared focal plane arrays
Modern uncooled infrared focal plane arrays (UFPA) development is oriented toward silicon microstructure monolithic arrays by employing pyroelectric thin films with continuing trends in high performance and miniaturization. In order to exploit high performance pyroelectric thin films, (1.x)Pb(Mg1/3Nb2/3)O3.xPbTiO3 (PMN-PT) thin films with x = 0.26 were deposited on LaNiO3/Si substrates by the radio-frequency magnetron sputtering technique. (110) preferred orientation thin films with pure perovskite structures were obtained at a substrate temperature of 500 oC. The ferroelectric, dielectric and pyroelectric properties of the films were investigated. The films show a typical polarization – electric filed hysteresis loop with a large remnant polarization of 17.2 μC/cm2. At room temperature, the high pyroelectric coefficient of 3.1 × 10-4 C/m2K together with low dielectric constant of 470 and loss tangent of 0.04 render the film promising for uncooled infrared device applications. The origin of the differences in electrical properties between the films and bulk materials has also been discussed.
PMN-PT thin films Ferroelectric Dielectric Pyroelectric
Yanxue Tang Yue Tian Feifei Wang Dazhi Sun Wangzhou Shi
Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University,Shanghai 200234, Pe Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University, Shanghai 200234, P
国际会议
11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)
青岛
英文
242-246
2010-09-25（万方平台首次上网日期，不代表论文的发表时间）