Integration between LiNbO3 ferroelectric film and AlGaN/GaN system

摘要：

LiNbO3 film (LNO)/AlGaN/GaN heterostructure was fabricated epitaxially. The preferable C+ oriented domains in LNO film lead to the formation of the spontaneous ferroelectric polarization. As a result, the sheet electron concentration of the 2DEG (ns) decreased from 1.13×1013 cm-2 to 1.04×1013 cm-2 when a LNO film deposited on the AlGaN/GaN. The ns decreased nonlinearly with decreasing the temperature. Additionally, the electron mobility for the LNO/AlGaN/GaN heterostructure decreased greatly compared with that for AlGaN/GaN heterostructure, which was caused by the non-uniform domain structure in the LNO film. By external bias switching the ferroelectric polarization, the relative enhancement of the 2DEG, about 7.68×1011/cm2, could be accessible from capacitance-voltage measurement. These results indicated that ferroelectric films combined with AlGaN/GaN would hold promise for next-generation GaN-based memory devices.

关键词： LiNbO3 film GaN ferroelectric polarization C-V

作者: L. Z. Hao J. Zhu Y. R. Li

作者单位: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of ElectronicScienc State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 303-308

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）