60Co Gamma–ray Irradiation Effects on Pentacene-based Organic Thinfilm Transistors

摘要：

Electrical characterization of 60Co γ-ray radiation effects on pentacene-based organic thin-film-transistors having two kinds of gate insulator have been carried out. For transistors with SiO2 gate insulator, the threshold voltage shifts are consistent with positive charge trapping in the oxide and a “rebound effect is observed. This “rebound effect is attributed to the negatively charged interface traps generated during irradiation. For polyimide gate insulator, the threshold voltage continually decreases with an increasing total-dose. At total-dose of 1200 Gy (Si), for the SiO2 gate insulator, the field-effect mobility decreased by almost 80％, and for polyimide gate insulator, it decreased by 40％.

关键词： 60Co γ-ray radiation damage pentacene OTFTs

作者: Li Cai Toshio Hirao Hiroaki Yano Zongfan Duan Hideharu Takayanagi Hideharu Ueki Takeshi Ohshima Yasushiro Nishioka

作者单位: Department of Precision Machinery, College of Science and Technology,Nihon University, 7-24-1 Narash Japan Atomic Energy Agency,1233 Watanuki-machi, Takasaki-shi, Gunma 370-1292, Japan Department of Precision Machinery, College of Science and Technology,Nihon University, 7-24-1 Narash Department of Precision Machinery, College of Science and Technology, Nihon University, 7-24-1 Naras

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 576-579

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）