Effect of rapid thermal annealing condition on the structure and conductivity properties of polycrystalline silicon films on glass

摘要：

The effect of rapid thermal annealing (RTA) temperature (700~1200℃) and time (1~8 min) on the structure and conductivity properties of polycrystalline silicon (Si) films on glass, grown by RTA crystallization of magnetron sputtering (MS) deposited amorphous Si (a-Si) films, was investigated by means of X-ray diffraction (XRD) and UV reflectance. It was observed the critical temperature for crystallizing a-Si films was ~750℃ and ~700℃ based on XRD and reflectance measurements, respectively. As soon as RTA temperature reached and exceeded the critical value, the structural property of polycrystalline Si films increased with RTA temperature or time. The above results were related to the thermal and photon effects induced by RTA. Moreover, it was revealed that the resistivity of polycrystalline Si films decreased with RTA temperature, however, even the resistivity of the polycrystalline Si films annealed at 1200℃ was 2 orders of magnitude higher than that of Si target, attributed to the carrier scattering by grain boundaries or defects. The polycrystalline Si films on glass fabricated by MS deposition combined with RTA crystallization may endow them with great application potentials in Si thin-film solar cells.

关键词： polycrystalline silicon magnetron sputtering rapid thermal annealing crystallization

作者: Weiyan Wang Jinhua Huang Xianpeng Zhang Weijie Song Ruiqin Tan

作者单位: Division of Functional Materials and Nanodevices, Ningbo Institute of Material Technology and Engine Division of Functional Materials and Nanodevices, Ningbo Institute of Material Technology andEnginee Faculty of Information Science and Engineering, Ningbo University, Ningbo, 315211, P.R. China

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 634-640

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）