Influence of annealing and Europium-doping on the structure and optical properties of ZnO thin films grown on quartz substrate by magnetron sputtering
ZnO and Eu-doped ZnO thin films were deposited on quartz substrates by reactive radio-frequency magnetron sputtering from a ZnO and Eu-doped ZnO ceramic target respectively. The properties of thin films were characterized by atom force microscope (AFM), X-ray diffraction (XRD), and photoluminescence spectra (PL). XRD reveals that the prepared thin films possess a single crystalline hexagonal wurtzite crystal structure with preferential c-axis orientation. Under above-bandgap excitation at room temperature, PL shows that ZnO films exhibit strong UV near-band-edge excitonic emission and Eu-doped ZnO thin films present UV emission and red emission from Eu3+ ions, demonstrating efficient energy transfer from the host to Eu3+ ions. The influence of annealing on the structure and optical properties of ZnO and Eu-doped ZnO thin films is studied. The efficient energy transfer from the host to Eu3+ and high luminous efficiency indicates that the prepared Eu-doped ZnO thin films are very promising materials for lighting and flat panel display application.
ZnO thin films Eu3+-doped reactive radio-frequency magnetron sputtering photoluminescence
Q.Q. Dai L.Luo F.Y. Huang D.P. Xiong X.G. Tang J. Chen
School of Physics & Optoelectronic Engineering, Guangdong University of Technology,Guangzhou 510006, Instrumental Analysis & Research Center, Sun Yat-Sen University, Guangzhou 510275, China
国际会议
11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)
青岛
英文
667-672
2010-09-25（万方平台首次上网日期，不代表论文的发表时间）