Influences of Nitrogen Partial Flux on the Phase Structures and Electrical Properties of Aluminium Doping TaNx Thin Films

摘要：

Aluminium doping TaNx thin films were deposited on Al2O3 ceramic wafers by DC reactive magnetron sputtering. The influences of nitrogen partial flux on the phase structures and the electrical properties of the samples were investigated in detail. The results show that the main phases in the samples are gradually changed from poor nitrogen phases to rich nitrogen phases with the increase of the nitrogen partial flux. The deposition rate of the samples is decreased with the increase of the nitrogen partial flux. With the increase of the nitrogen partial flux, the resistivity and the absolute value of the temperature coefficient of resistance (TCR) of the samples increase slowly at lower nitrogen partial flux, and then increase remarkably at higher nitrogen partial flux. These experimental results can be explained by the presentation of rich nitrogen phases with higher resistivity and absolute value of the TCR when the samples were prepared at higher nitrogen partial flux.

关键词： TaNx thin films magnetron sputtering nitrogen partial flux electrical properties

作者: H.C. Jiang X. Si W.L. Zhang B. Peng C.J. Wang

作者单位: State Key Laboratory of electronic Thin Films and Integrated Devices, University of ElectronicScienc State Key Laboratory of electronic Thin Films and Integrated Devices, University of Electronic Scien

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 673-676

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）