Investigation of phase transitions in stacked GeTe/SnTe and Ge2Se3/SnTe chalcogenide films

摘要：

Phase transitions in stacked GeTe/SnTe and Ge2Se3/SnTe thin layers for potential phase-change memory applications have been investigated by X-ray diffraction using an area detector system and by scanning electron microscopy. The as-deposited underlying GeTe or Ge2Se3 layer is amorphous, whereas the top SnTe layer is crystalline. In GeTe/SnTe stack, the crystallization of GeTe phase occurs near 170℃, and upon further heating, GeTe phase disappears, followed by the formation of rocksalt-structured GexSn1-xTe solid solution. In Ge2Se3/SnTe stack, the phase transition starts with the separation of SnSe phase due to the migration of Sn ions into the Ge2Se3 layer. The migration of Sn ions and the formation of SnSe are believed to facilitate the crystallization of Ge2Se3 solid solution at ~360℃, which is much lower than the crystallization temperature of Ge2Se3, therefore consuming less power during the phase transition.

关键词： Phase-change memory Chalcogenide Phase transition

作者: Feiming Bai Huaiwu Zhang Surendra Gupta Santosh Kurinec

作者单位: State Key Laboratory of Electronic Thin Film and Integrated Devices, University of ElectronicScience State Key Laboratory of Electronic Thin Film and Integrated Devices, University of ElectronicScience Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY USA

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 677-683

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）