The microstructure, resistivity and infrared emissivity of ITO film with O/Ar ratio variation in Al2O3 buffer layer
ITO films with different oxygen-argon ratios varies from 0 ％ to 8 ％ for Al2O3 buffer layer have been fabricated by magnetron sputtering on soft PET substrate. The microstructure, resistivity, transmittance in visible light range and infrared emissivity were measured by XRD, four-point probe technology, UV-Vis spectrophotometer and Fourier Transform Infrared Spectroscopy (FTIR) as a function of different oxygen-argon ratios of Al2O3 buffer layers, respectively. It can be found that the (222) plane crystallization improves with the increase of O/Ar ratio, (622) peak under 2％ O/Ar ratio and (440), (211) peaks under 8％ O/Ar ratio appear, respectively. The resistivity is also influenced significantly by the O/Ar ratio, though the variation of resistivity is not sensitive to O/Ar ratio higher than 2％. The results reveal that the best ITO film performance under the oxygen-argon ratio 2％ for Al2O3 buffer layer. It is also found that surface roughness and interface state play an important role in the variation of transmittance and emissivity. The emissivity of all the ITO films deposited on Al2O3 buffer layer is dominated by both sheet resistance and surface morphology.
ITO Films Resistivity Emissivity
Yipeng Chao Wu Tang Xiaolong Weng Longjiang Deng
State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Scienc
国际会议
11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)
青岛
英文
771-777
2010-09-25（万方平台首次上网日期，不代表论文的发表时间）