Controlled growth and supercapacitive behaviors of CVD carbon nanotube arrays

摘要：

Low-pressure chemical vapor deposition (LP-CVD) technique has been utilized for controlled growth of carbon nanotube (CNT) arrays on silicon wafers. The tube-diameters of CNTs and the number of graphene layers are controlled by varying the thickness of catalyst films. The catalyst particle density and the growth conditions such as the ambient gas and the local environment are all crucial for the formation of vertically aligned CNT arrays. The length of CNT arrays can be controlled by altering the growth time. In addition, the supercapacitive properties of CNT arrays with various morphologies growing on different current collectors have been investigated using a less corrosive 0.5 M Na2SO4 aqueous solution as the electrolyte. Vertically aligned CNT arrays on Ti-Si substrate produce a higher capacitance compared to randomly oriented CNTs on the same current collector. Furthermore, Ni foam enables better utilization of active materials than Ti-Si substrate. CNT arrays electrodes fabricated by this simple, low cost approach demonstrate stable and consistent capacitor behaviors for a wide range of scan rates. Moreover, CNT arrays electrodes provide better platform for further integration with transitional metal oxide, via simple sputtering or electrodeposition technique, to enhance the supercapacitive performance.

关键词： Carbon nanotube arrays Chemical vapor deposition Controlled growth Supercapacitor

作者: Dandan Zhao Zhi Yang Hao Wei Yafei Zhang

作者单位: Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National KeyLaborato Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National KeyLaborato Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, National Key Laborat

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 11-18

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）