Long Si3N4 Nanowires Fabricated by PECVD
The paper presents the fabrication of Si3N4 nanowires prepared on Si substrate by plasma-enhanced chemical vapor deposition (PECVD) technology. The nanowires were formed using silane (SiH4) and nitrogen (N2) as reactive gases under the action of Fe catalysts. They are characteristics of superlong straight and flexural types observed by field emission scanning electron microscopy (FESEM). The former with a length of 3.96 μm has smooth surface and uniform diameter resulting from an orientation growth process, while the latter is 5.20 μm formed by two nanowires twisted together with a squeezing growth way. A growth model has been developed for the formation of the nanowires, and the growth mechanism of the nanowires has been discussed. The straight and flexural Si3N4 nanowires can be used as nano-scaled bridge, spring, and cantilever in the fabrication of nano-machine systems.
Si3N4,nanowire PECVD FESEM XRD XPS
Jingwei Song Xiying Ma
School of Mathmatics and Physics, Suzhou University of Science and Technology,1701 Binhe Road, Suzhou 215011, Jiangsu, China
国际会议
11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)
青岛
英文
85-89
2010-09-25（万方平台首次上网日期，不代表论文的发表时间）