Numerical simulation of 300mm CZ silicon crystal growth with axial magnetic fields

摘要：

We studied the optimization of 300mm CZ silicon crystal growth in 28 inch hot zone with axial magnetic field. The convex of melt-crystal interfaces toward to the crystal are observed in our simulations under different growth velocities (0.3mm/min, 0.5mm/min and 0.65mm/min). The convections in melt were illustrated under different growth rates and intensities of magnetic field. The growth rate of 0.5mm/min and axial magnetic fields intensity of 0.3T were recommended as an appropriate control condition.

关键词： Silicon crystal growth 300mm magnetic field simulation

作者: Wenting Xu Hailing Tu Qing Chang Qinghua Xiao Xiaolin Dai Yunxia Liu Zongfeng Li Lin Chang Weida Liu

作者单位: General Research Institute for Non-ferrous Metals, Beijing, 100088, China General Research Institute for Non-ferrous Metals, Beijing, 100088, China; GRINM Semiconductor Materials Co.Ltd., Beijing, 100088, China

会议类型: 国际会议

会议名称: 11th IUMRS International Conference in Asia(第十一届国际材联亚洲材料大会 IUMRS-ICA 2010)

会议地点: 青岛

会议语种:英文

页码: 179-183

在线出版日期: 2010-09-25（万方平台首次上网日期，不代表论文的发表时间）