W-Band MMIC Amplifiers Based on 50-nm Dual- Gate InP HEMT
Two MMIC amplifiers have been developed in coplanar technology using 50-nm InAlAs/lnGaAs HEMTs.The first is a sing-stage amplifier which used balanced doublestub matching networks for both input and output impedances matching. Measured gain is 8.2 dB @ 813 GHz, and the 3-dB bandwidth is at least 13.7 GHz. The second is a two-stage common-source power amplifier. A ＃ type distributed transmission line networks has been developed and applied to inter-stage and output stage matching networks. This technique propose a new and efficient approach for impedance matching between transistors where DC blocking and separate bias supplies to the active devices are required. Measured gain is 10.1 dB @ 84 GHz and the 3-dB bandwidth is 14.7 GHz. The saturated power is 11.6 dBm @ 85 GHz, 3.6 dB higher than the above-mentioned single-HEMT amplifier. Measured data are in agreement with the simulation results.
HEMT InP Power amplifier
Hongfei Yao Yuxiong Cao Xiantai Wang Yinghui Zhong Zhi Jin
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
国际会议
2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)
哈尔滨
英文
9-13
2012-05-27（万方平台首次上网日期，不代表论文的发表时间）