A K-Band Down-Conversion Mixer Design with Integrated Baluns in 65nm CMOS

摘要：

This paper presents a K-Band Down-Conversion mixer which is implemented in 65nm CMOS process. The conversion gain, noise performance and linearity are improved by using current bleeding technique and inserting an additional resonating inductor at common sources. The minimum NF is 12.7dB and the maximum conversion gain is 4.1dB with IIP2 of 80dBm. Two identical passive baluns are integrated for RF and LO input signals, which demonstrate a performance of 9dB insertion loss.

关键词： CMOS mixer resonating inductor parasitic capacitors current bleeding baluns

作者: Peng Wei Shengxi Diao Dong Huang Zhongqian Fu Fujiang Lin

作者单位: Department of Electronic Science and Technology University of Science ant Technology of China Hefei, China

会议类型: 国际会议

会议名称: 2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)

会议地点: 哈尔滨

会议语种:英文

页码: 282-285

在线出版日期: 2012-05-27（万方平台首次上网日期，不代表论文的发表时间）