GaAs Device Ohmic Contact Degradation Assessment and Analysis

摘要：

GaAs PHEMT are used abroad in high temperature and high power RF/Microwave field; it is the most promising microwave devices. In long-term use, the PHEMT device may cause parameter drift and output power decrease. In this paper, based on the analysis of device structure and degradation mechanism, we design structure doing high-temperature accelerated lift testing, and analyze using SIMS, FIB, EM and other equipment, finally evaluating Ohmic contact of GaAs devices.

关键词： GaAs PHEMT device lift testing Ohmic contact

作者: Xiao Hong Yun Huang

作者单位: Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The

会议类型: 国际会议

会议名称: 2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)

会议地点: 哈尔滨

会议语种:英文

页码: 320-322

在线出版日期: 2012-05-27（万方平台首次上网日期，不代表论文的发表时间）