Developing the Ka-band GaN Power HEMT devices

摘要：

High quality Al0.3Ga0.7N/GaN/Al0.04Ga0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 urn self-aligned Tshaped gate technology, a 4.5 W/mm output power density and 28％ PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Yshaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Yshaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3％ PAE were also obtained in CW mode at 34GHz.

关键词： Ka-band GaN Power HEMT

作者: J. J. Zhou X. Dong C. Kong Y. C. Kong C. J. Ren Z. H. Li T. S. Chen C. Chen B. Zhang

作者单位: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing, China

会议类型: 国际会议

会议名称: 2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)

会议地点: 哈尔滨

会议语种:英文

页码: 617-620

在线出版日期: 2012-05-27（万方平台首次上网日期，不代表论文的发表时间）