Planar Terahertz Nanodevices
Terahertz (THz) technology has recently attracted much attention due to a very broad range of potential applications, such as security and medical imaging, radio astronomy, and ultra-fast electronics for future generation computation and communications. However, the THz field is still largely unexploited due to the bottleneck issue that is the lack of compact, solid-state, room-temperature emitters and detectors. In this paper, our work on novel THz electronic nanodevices is reviewed. This includes the recent experimental demonstration of room-temperature operation of a planar nano-diode at different THz frequencies, which is one of the first electronic nanodevices to work beyond 1 THz to date. Unlike conventional diodes, the nano-diode does not rely on pn junction or barrier structure. The new working principle enables a zero threshold and nonexponential current-voltage characteristic. Whereas the device is essentially a broadband THz detector, resonant features of localized surface plasma oscillations have been shown by Monte Carlo simulations to significantly enhance the electron dynamics at a few THz. We also show that similar planar nanodevices can generate Gunn-like oscillations in the THz range, and hence it is possible to fabricate THz detectors and emitters on the same chip. Very recent low-frequency noise measurements demonstrated advantages of the devices in terms of noise figures and particularly noiseequivalent power. Finally, our recent effort to combine the THz nano-diodes with nano-antennas for energy harvesting will be discussed.
Terahertz nanodevice diode detection emission
Shahrir R. Kasjoo Linqing Q. Zhang Yasaman Alimi Claudio Balocco Aimin M. Song
School of Electrical and Electronic Engineering University of Manchester Manchester, UK
国际会议
2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)
哈尔滨
英文
625-628
2012-05-27（万方平台首次上网日期，不代表论文的发表时间）