Sub-Micrometer Vertical Type Current Channel of Semi-Conductive Al Gate Organic Semiconductor Copper Phthalocyanine Thin Film Transistor
The sub-micrometer vertical type current channel of semi-conductive Al gate organic semiconductor copper phthalocyanine thin film transistor (VOTFT) with five layered structure of Au (Emitter)/CuPc/AI(Base)/CuPc/Au(collector) is fabricated by vacuum evaporation technique with organic semiconductor copper phthalocyanine.. As the thickness of semi-conductive A thin film is approximately 20nm, the carriers emitted from source electrode tunnel through CuPc/AI/CuPc double schottky barrier formed the operating current of thin film transistors. The result shows that VOTFT has the unsaturated voltage and current characteristic similar with the bipolar mode static induction transistor, low driving voltage, strong gate voltage capacity and high current density. The dynamic small signal responsive frequency can be achieved to lOOOHz The DC characteristic is similar with inorganic semiconductor polycrystalline silicon devices.
thin film transistor copper phthalocyanine organic semiconductor vacuum evaporate
Xiaolin Wang Dongxing Wang Changhao Wang Chao Pang Jing Hua Yin Hong Zhao
Department of Electronic Science and Technology, College of Applied Science, Key Laboratory of Engineering Dielectrics and Its Application,Ministry of Education Harbin University of Science and Technology, Heilongjiang Harbin 150080, China College of Applied Science. Microelectronics and Solid Electronics Harbin University of Science and Technology Harbin, China
国际会议
2012 International Conference on Measurement,Information and Control(2012测量、信息与控制国际会议 ICMIC2012)
哈尔滨
英文
432-435
2012-05-18（万方平台首次上网日期，不代表论文的发表时间）