The Fabrication and UV Photosensitive Characteristics of Al/ZnO/Ag Schottky Barrier Diode
In this paper, n-type ZnO thin film was grown on single crystal Si ( 111 ) substrates by RF magnetron sputtering and high temperature annealing in vacuum. X-ray diffraction(XRD) and scanning electron microscope(SEM) were used to investigate film qulity and the structural performance. The results show that ZnO thin film is well c-axis oriented and the surface of ZnO is very clean and smooth. In the same conditions of depositing ZnO thin film, a vertical structure of Al/ZnO/Ag Schottky barrier diode detctor was designed and fabricated on the quartz glass substrate. The characteristics of dark-and photo-current of the Schottky UV photodetector was investigated. The results of testing at room temperature indicate that there is a good Schottky behavior between Ag and ZnO, the effective barrier height was determined to be 0.60 and 0.53eV by current-voltage and capacitance-voltage measurements respectively. The ideality factor was found to be 12.6, theoretical calculation of the space charge density was 3.1×1016 cm-3. At a bias of 3V, dark current was 24.19mA without illumination. Under illumination using monochromatic light with a wavelength of 365 nm, photogenerated current arrived at 3.28mA, at a bias of 3V, suggest that Al/ZnO/Ag UV photodetector has a significantly light response characteristics.
UV photodetector Schottky barrier diode ZnO thin film styling I-V characteristic
Changhao Wang Dongxing Wang Chao Pang Xiaolin Wang Jinghua Yin Hong zhao
Department of Electronic Science and Technology, College of Applied Science, Key Laboratory of Engin Department of Electronic Science and Technology, College of Applied Science, Key Laboratory of Engin
国际会议
2012 International Conference on Measurement,Information and Control(2012测量、信息与控制国际会议 ICMIC2012)
哈尔滨
英文
659-662
2012-05-18（万方平台首次上网日期，不代表论文的发表时间）