A3.5 GHz Antiparallel Diode Pair Mixer in GaN-on-Si HEMT Technology

摘要：

This paper presents a 3.5 GHz antiparallel diode pair mixer using a 0.35 μm GaN-on-Si HEMT technology. The antiparallel diode pair mixer has a conversion gain of -17.2 dB at 3.5 GHz. The LO-to-RF, LO-to-lF, and RF-to-IF isolation are -47.9, -34.8 and -27.5 dB at 3.5 GHz, respectively. The measured P1dB and third-order intercept point (1IP3) are +7 dBm and +17 dBm, respectively. The mixer occupies a chip area, including probing pads, of 0.9 mm2.

作者: Chih-Sheng Yeh Hsuan-Ling Kao Jiun-Yi Ke Bo-Wen Wang Cheng-Lin Cho Hsien-Chin Chiu Li-Chun Chang

作者单位: Dept. of Electronic Engineering, Chang Gung Univ., Tao-Yuan, Taiwan Dept. of Materials Engineering, Mingchi University of Technology, Taipei, Taiwan Center for Thin Fil

会议类型: 国际会议

会议名称: 2012 4th International High Speed Intelligent Communication Forum(2012年国际高速智能通信论坛 HSIC2012)

会议地点: 南京

会议语种:英文

页码: 20-23

在线出版日期: 2012-05-17（万方平台首次上网日期，不代表论文的发表时间）