Low Insertion Loss Ka-Band SPST Switch Using S-GCPW Designs

摘要：

This paper presented 28 GHz single-pole-single-throw switch using a 0.18μm CMOS process. The CMOS transistors are designed to have a high substrate resistance to minimize the insertion loss and improve power handling capability. The SPST switch has insertion loss of-7.2 dB and isolation is greater than-29 dB at 24 GHz.

关键词： microwave switch SPST CMOS switch

作者: Kuan-Liang Cho Hsien-Chin Chiu Yen-Chang Tu Chia-Sung Wu

作者单位: Department of Electronic Engineering,Chang Gung University, Taoyuan, Taiwan, Republic of China Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan, Republic of China Department of Electronic Engineering, Vanung University, Taoyuan, Taiwan

会议类型: 国际会议

会议名称: 2012 4th International High Speed Intelligent Communication Forum(2012年国际高速智能通信论坛 HSIC2012)

会议地点: 南京

会议语种:英文

页码: 26-28

在线出版日期: 2012-05-17（万方平台首次上网日期，不代表论文的发表时间）