Analysis and Study of Electrical Characteristics of Through Silicon Via in 3D Integration
Since through silicon vias (TSVs) emerges as the key technology and essential components to enable 3D integration, it is of great importance to explore and investigate its electrical characteristics. In this paper, a 2-tier signal-ground TSV is studied in frequency domain using 3D full wave field solver. The impact of physical configurations and materials on TSV electrical performance is evaluated and analyzed in details.
Xiang He Qunsheng Cao
College of Electronic and Information Engineering Nanjing University of Aeronautics and Astronautics Nanjing 210016, China
国际会议
2012 4th International High Speed Intelligent Communication Forum(2012年国际高速智能通信论坛 HSIC2012)
南京
英文
141-144
2012-05-17（万方平台首次上网日期，不代表论文的发表时间）