Ferroelectricity of PZT-based Thin Films Doped with Mn and Nb

摘要：

The ternary compound thin films doped with Mn and Nb,Pb(Mnl/3,Nb2/3)O3-PbZrO3-PbTiO3(PMnN-PZ-PT),with the same ratio of PZ/PT=52:48(PZT(52/48))are fabricated on the heterostructure substrates of SrRuO3(SRO)/Pt(111)/Ti/SiO2/Si(100)by the radio frequency(RF)magnetron sputtering system,in which the quench method is used for the post heat treatments. The ternary compound films exhibit poiycrystal phase combined with(001),(101)and(111)orientations with the 6％ mole percent mixing ratio of PMnN,in which the (111)directions are the main orientations for nonmixed PZT(52/48)films and 6％ mole percent PMnN mixing PZT(52/48)films(6％PMnN-94％PZT(52/48)),and so both of them are epitaxially grown on Silicon substrates with the(111)orientation.The ferroelectricities of the films are studied by the Sawyer Tower circuit,and the results show that the mixing of PMnN seriously improves the ferroelectricities of PZT(52/48),in which the 6％ mixed PZT films own the rest polarization intensity pr = 23.7μC/m2 ,the saturation polarization intensity ps = 40μC/m2 and the coercive electric-field intensity Ec =139 kV/cm which are distinctly larger than the nonmixed PZT(52/48)films.

关键词： ferroelectricity PZT thin film sputtering method

作者: Tao Zhang Hongwei Ma Jie Liu Pengli Zhang and Ping Liu

作者单位: College of Science,Xian University of Science and Technology,Xian 710054,China College of Mechanical Engineering,Xian University of Science and Technology,Xian 710054,China

会议类型: 国际会议

会议名称: 2012 2nd International Conference on Advanced Material Research(2012 第二届先进材料研究国际会议 ICAMR2012)

会议地点: 成都

会议语种:英文

页码: 472-476

在线出版日期: 2012-01-07（万方平台首次上网日期，不代表论文的发表时间）