Investigation of Deposition Parameter Effects on Energy Bandgap of Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition via Factorial Experiment

摘要：

The energy bandgap(Eg)of silicon thin film prepared by plasma enhanced chemical vapor deposition(PECVD) is greatly dependent on the deposition conditions.Although the influence of some deposition parameters on Eg has been studied individually,it is still not clear which parameter plays the most important role.Here,a 5-factor 5-level factorial experiment was designed and carried out for the deposition parameters: the flow rate of SiH4,the flow rate of H2,the plasma power,the total gas pressure,and the substrate temperature.By making main effect analysis to the influences of such 5 factors on Eg,not only the influence of each deposition parameter was obtained,but also the most critical parameters were selected out.It was found that the gas flow rate of SiH4 and the total gas pressure played the most important roles on determining Eg of silicon thin film.That is to say,in order to obtain an expected Eg for Si thin film prepared by PECVD,much attention should be paid to optimize the two parameters.However,other parameters,including the H2 flow rate,the plasma power and the substrate temperature,can be set as default values according to the experience.Thus,the optimization workload can be reduced greatly.

关键词： Factorial experiment Silicon thin film Energy bandgap PECVD

作者: Lei Zhao Bending Zhao Baojun Yan Hongwei Diao Wenjing Wang

作者单位: Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences,Instit Key Laboratory of Solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences,Instit

会议类型: 国际会议

会议名称: 2012 2nd International Conference on Advanced Material Research(2012 第二届先进材料研究国际会议 ICAMR2012)

会议地点: 成都

会议语种:英文

页码: 592-596

在线出版日期: 2012-01-07（万方平台首次上网日期，不代表论文的发表时间）