The influence of annealing temperature on ZnO thin films by oxidating Zinc films deposited with magnetron sputtering

摘要：

Zn films were prepared on Si(111)substrates by radio frequency magnetron sputtering system,which were subsequently annealed at different temperature in O2 ambient.Their microstructure,morphology,composition and optical properties,particularly as a function of annealing temperature,were studied by XRD,SEM,FTIR,XPS and PL characterizations.All the results show that the crystal quality of ZnO film can be improved by increasing annealing temperature,and the optimum annealing temperature is 800℃ in our experiment.The XRD and SEM results show that the ZnO films have a hexagonal structure with cell constants of a = 0.3249 nm and c = 0.5206 nm under the optimum experimental conditions.The FTIR and XPS results further confirm hexagonal structure of ZnO.The PL result shows that best UV and green light emission are found in the samples annealed at 800 ℃.

关键词： Zn O films annealing temperature magnetron sputtering

作者: Haibo Sun Zhencui Sun Chengshan Xue

作者单位: Department of Mathematics and Physics,Shandong Jiaotong University,Jinan,China College of Physics and Electronics,Shandong Normal University,Jinan,China

会议类型: 国际会议

会议名称: 2012 2nd International Conference on Advanced Material Research(2012 第二届先进材料研究国际会议 ICAMR2012)

会议地点: 成都

会议语种:英文

页码: 624-628

在线出版日期: 2012-01-07（万方平台首次上网日期，不代表论文的发表时间）