75V Space-Efficiency Trench Power MOSFET

摘要：

In this work, a trench power MOSFET (U-MOS) with space-efficiency is investigated.Reduction of cell pitch is an effective approach to diminish the total specific on-resistance (Rds,sp) of U-MOS, with a realization of embedded source contact and protuberant gate.And the influence of some key parameters on U-MOS static performances are simulated and analyzed by TCAD-Process.Then the optimum parameters of a 75 V rated space-efficiency U-MOS for automotive applications with 94.59 mΩ·mm2 specific onresistance is given.

关键词： trench power MOSFET (U-MOS) cell pitch optimum design space-efficiency

作者: Lishan Yu Quanyuan Feng

作者单位: School of Information Science and Technology,Southwest Jiaotong University,Chengdu,Sichuan 610031,China

会议类型: 国际会议

会议名称: 2011 IEEE International Conference on Smart Grid and Clean Energy Technologies(2011 IEEE智能电网与清洁能源技术国际会议 ICSGCE2011)

会议地点: 成都

会议语种:英文

页码: 205-208

在线出版日期: 2011-09-27（万方平台首次上网日期，不代表论文的发表时间）