High Permittivity Dielectric LDMOS for Improved Performance
This paper presents a lateral double diffusion MOSFET (LDMOS) using high permittivity (high-K) material as the dielectric instead of conventional SiO2.The high-K dielectric is capable of cutting the surface peak field of the device, which allows higher drift region doping concentration and results in the improvements of breakdown voltage, on-resistance, and threshold voltage for the device. The mechanism is analyzed in detail and the device behavior with varying parameters are simulated by Medici, whose results demonstrate that device performance is effective improved with the replacement of SiO2 by high-K material.
LDMOS high permittivity on-resistance breakdown voltage threshold voltage
Junhong Li Ping Li
State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronics Science and Technology of China,Chengdu 610054,China
国际会议
成都
英文
209-212
2011-09-27(万方平台首次上网日期,不代表论文的发表时间)