会议专题

High Permittivity Dielectric LDMOS for Improved Performance

This paper presents a lateral double diffusion MOSFET (LDMOS) using high permittivity (high-K) material as the dielectric instead of conventional SiO2.The high-K dielectric is capable of cutting the surface peak field of the device, which allows higher drift region doping concentration and results in the improvements of breakdown voltage, on-resistance, and threshold voltage for the device. The mechanism is analyzed in detail and the device behavior with varying parameters are simulated by Medici, whose results demonstrate that device performance is effective improved with the replacement of SiO2 by high-K material.

LDMOS high permittivity on-resistance breakdown voltage threshold voltage

Junhong Li Ping Li

State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronics Science and Technology of China,Chengdu 610054,China

国际会议

2011 IEEE International Conference on Smart Grid and Clean Energy Technologies(2011 IEEE智能电网与清洁能源技术国际会议 ICSGCE2011)

成都

英文

209-212

2011-09-27(万方平台首次上网日期,不代表论文的发表时间)